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Stephen E Saddow, Anant Agarwal's Advances in Silicon Carbide Processing and Applications PDF

By Stephen E Saddow, Anant Agarwal

ISBN-10: 1580537405

ISBN-13: 9781580537407

Study the most recent advances in SiC (Silicon Carbide) know-how from the prime specialists within the box with this new state-of-the-art source. The e-book is your unmarried resource for in-depth info on either SiC equipment fabrication and system-level functions. This entire reference starts with an exam of the way SiC is grown and the way defects in SiC progress can have an effect on operating units.

Key matters in selective doping of SiC through ion implantation are coated with specific concentrate on implant stipulations and electric activation of implants. SiC purposes mentioned contain chemical sensors, motor-control parts, high-temperature fuel sensors, and high-temperature electronics. via slicing throughout the arcane information and jargon surrounding the hype on SiC, this publication offers a good overview of today’s SiC expertise and indicates you ways SiC might be followed in constructing tomorrow’s purposes.

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Additional resources for Advances in Silicon Carbide Processing and Applications

Sample text

9. The source and gate of this device are connected together to create a convenient two-terminal device. 9). The buried source, drain, and channel region move the conducting path in the device away from the surface of the SiC, thus reducing the influence of surface and environmental effects.

4] Baliga, B. , Power Semiconductor Devices, Boston, MA: PWS Publishing Company, 1996, p. 74. [5] Allen, S. , “Recent Progress in SiC Microwave MESFETs,” Mat. Res. Symp. , Vol. 572, 1999, pp. 15–22. , and R. Davis, “Material Properties and Characterization of SiC, Semiconductors and Semimetals,” SiC Materials and Devices, Vol. 52, Y. S. ), 1998. html. , and J. , Lund, Sweden: Studentlitteratur, 2002, pp. 28–29. [9] Slack, G. , J. Appl. , Vol. 35, 1964, p. 3460. [10] Müller, S. , Mat. Sci. Forum, Vols.

Forum, Vol. 389–393, 2002, p. 1363. [33] Mitchel, W. , Mat. Sci. Forum, Vols. 338–342, 2000, pp. 21–24. , Mat. Sci. Forum, Vols. 338–342, 2000, pp. 131– 136. , Mat. Sci. Forum, Vols. 433–436, 2003, pp. 33–38. [36] Son, N. , Mat. Sci. Forum, Vols. 433–436, 2003, pp. 45–50. , Appl. Phys. , Vol. 69, 1996, pp. 1456–1458. , Mat. Re. Soc. , Vol. 640, 2001. , Mat. Sci. Forum, Vols. 264 –268, 1998, pp. 103–106. S. Patent 6,039,812, 2000. Leys, M. , and H. Veenvliet, J. Cryst. Growth, Vol. 55, 1981, p. 145.

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Advances in Silicon Carbide Processing and Applications by Stephen E Saddow, Anant Agarwal


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